20NM65N(2011) Datasheet PDF - STMicroelectronics

Description
These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

FEATUREs
■ 100 % avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

APPLICATION
■ Switching applications