22NM60ND Datasheet PDF - STMicroelectronics

Description
This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

FEATUREs
• Designed for automotive applications and AEC-Q101 qualified
• Fast-recovery body diode
• Low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• High dv/dt ruggedness

APPLICATIONs
• Switching applications