240N10F7 Datasheet PDF - STMicroelectronics

Description
This N-channel Power MOSFET utilizes the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

FEATUREs
• Ultra low on-resistance
• 100% avalanche tested

APPLICATIONs
• High current switching applications