26NM60ND Datasheet PDF - STMicroelectronics

Description
These FDmeshâ„¢ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmeshâ„¢ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.

FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities

APPLICATIONs
• Switching applications