2ED2304S06F(2020) Datasheet PDF - Infineon Technologies

Description
The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied.

FEATUREs
• Infineon thin-film-SOI-technology
• Fully operational to +650 V
• Floating channel designed for bootstrap operation
• Output source/sink current capability +0.36 A/-0.7 A
• Integrated Ultra-fast, low RDS(ON) Bootstrap Diode
• Tolerant to negative transient voltage up to -100 V
   (Pulse width is up 300 ns) given by SOI-technology
• 10 ns typ., 60 ns max. propagation delay matching
• dV/dt immune ±50 V
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V and 15 V input logic compatible
• RoHS compliant

Potential applications
• Motor drives, General purpose inverters
• Refrigeration compressors
• Half-bridge and full-bridge converters in offline AC-DC power supplies for telecom and lighting