2N3553 Datasheet PDF - New Jersey Semiconductor

VHF Silicon NPN Power Transistor

The 2N3553 is a silicon epitaxial planar transistor of NPN structure. This device is intended for large signal, high power oscillator-amplifier application in the VHF-UHF (100MC to 400MC) region. The 2N3553 transistor utilizes a multi-emitter structure consisting of many separate emitter areas interconnected by metal applied on the silicon wafer using advanced photo-etching techniques. This processing technology applied to these transistors results in the high efficiency, high-gain characteristics desirable for UHF operation.