2N6299 Datasheet PDF - Shenzhen SPTECH Microelectronics Co., Ltd.

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
• High DC Current Gain : hFE= 750(Min) @IC= -4A
• Low Saturation Voltage
• Complement to Type 2N6301

APPLICATIONS
• Designed for general-purpose power amplifier and low frequency switching applications