2SC4226 Datasheet PDF - SHIKE Electronics

NPN SILICON RF TRANSISTOR

External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier.

FEATURE
   High gain:︱S21e︱2 TYP. Value is 11dB @ VCE=3V，IC=7mA，f=1GHz
   Low noise: NF TYP. Value is 1.4dB          @ VCE=3V，IC=7mA，f=1GHz
   fT (TYP.) : TYP. Value is 4.5GHz              @ VCE=3V，IC=7mA，f=1GHz