2STC4467 Datasheet PDF - STMicroelectronics

Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

FEATUREs
■ High breakdown voltage VCEO = 120 V
■ Complementary to 2STA1694
■ Fast-switching speed
■ Typical ft = 20 MHz
■ Fully characterized at 125℃

APPLICATIONs
■ Audio power amplifier