34NM60ND Datasheet PDF - STMicroelectronics

Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.

FEATUREs
■ The world’s best RDS(on) in TO-220 amongst
   the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
   capabilities

APPLICATIONs
■ Switching applications