34NM60ND(2013) Datasheet PDF - STMicroelectronics

Description
These devices are N-channel FDmesh™ V Power MOSFETs produced using STs MDmesh™ V technology, which is based on an innovative propritary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon-based Power MOSFETs, and superior switching performance with intrinsic fast-recovery body diode.

FEATUREs
• The world’s best RDS(on) in TO-220 amongst
   the fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
   capabilities

APPLICATIONs
• Switching applications