3DD13009K Datasheet PDF - Inchange Semiconductor

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 25V (Min)
• Complement to Type 2SB1119
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

APPLICATIONS
• Designed for LF Amp Electronic Governor applications.