Description
The device is manufactured using high voltage Multi Epitaxial Mesa technology adopting Hollow Emitter structure to enhance switching performances.
General features
■ High voltage and high current capability
■ Low spread of dynamic parameters
■ Low base-drive requirements
■ Very high switching speed
■ High ruggedness
■ Fully insulated power package U.L. compliant
APPLICATIONs
■ Switch mode power supplies for CRT TV