7N65F Datasheet PDF - VER SEMICONDUCTOR CO.,LIMITED

Description
   The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

General Features
   VDS = 650V ID =7A
   RDS(ON) < 1.2Ω @ VGS=10V （ Type： 1.0Ω）

APPLICATION
   Uninterruptible Power Supply(UPS)
   Power Factor Correction (PFC)