ACE12322A Datasheet PDF - ACE Technology Co., LTD.

Description
The ACE12322A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss and resistance to transients are needed.

FEATUREs
● 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V
● 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V
● 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● DFN2X2-6L package design

APPLICATIONs
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter