ACE1357BMS+H Datasheet PDF - ACE Technology Co., LTD.

Description
These P-Channel enhancement mode field effect transistors are produced using high cell density, DMOS technology.

FEATUREs
● VDS (V) = -20V,ID = -2A (VGS=-4.5V)
● RDS(ON)<120mΩ @ VGS= -4.5V
● RDS(ON)<150mΩ @ VGS= -2.5V
● TSOT-23-3 Package