Description
The ACE4606TB uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
FEATUREs
N-channel
• VDS=30V
• ID=7A
• RDS(ON) < 26mΩ (VGS=10V)
• RDS(ON) < 45mΩ (VGS=4.5V)
P-channel
• VDS=-30V
• ID=-4A
• RDS(ON) < 58mΩ (VGS=-10V)
• RDS(ON) < 80mΩ (VGS=-4.5V)