Description
ACE4612B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
FEATUREs
N-channel
• VDS=30V
• VGS=20V
• ID=6A
P-channel
• VDS=-30V
• VGS=20V
• ID=-4A