Description
The ACE4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
FEATUREs
N-channel
• VDS=30V
• ID=9A
• RDS(ON)<14mΩ(VGS=10V)
• RDS(ON)<22mΩ(VGS=4.5V)
P-channel
• VDS=-30V
• ID=-8A
• RDS(ON)<20mΩ(VGS=-10V)
• RDS(ON)<35mΩ(VGS=-4.5V)