ACE4826B Datasheet PDF - ACE Technology Co., LTD.

Description
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch, power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.

FEATUREs
● VDS 60V, VGS 20V, ID 5.5A
● RDS(ON)@10V, 30mΩ (typ.)
● RDS(ON)@4.5V, 35mΩ (typ.)