ACE4908A Datasheet PDF - ACE Technology Co., LTD.

Description
The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
● P-Channel
   -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V
   -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V
   -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability

APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter