Description
The ACE633 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
FEATUREs
● N-Channel
VDS(V)=60V
ID=5A
RDS(ON)
<35mΩ (VGS=10V)
<40mΩ (VGS=4.5V)
● P-Channel
VDS(V)=-60V
ID=-3.5A
RDS(ON)
<75mΩ (VGS=-10V)
<90mΩ (VGS=-4.5V)