AGR09085E Datasheet PDF - TriQuint Semiconductor

Introduction
   The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, reliability, and best-in-class thermal resistance. Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum output power of 85 W, it is ideally suited for todays RF power amplifier applications.

FEATUREs
   Typical performance ratings are for IS-95 CDMA,
   pilot, sync, paging, and traffic codes 8—13:
   — Output power (POUT): 20 W.
   — Power gain: 18 dB.
   — Efficiency: 28%.
   — Adjacent channel power ratio (ACPR) for
      30 kHz bandwidth (BW):
      (750 kHz offset: –45 dBc).
      1.98 MHz offset: –60 dBc).
   — Return loss: 10 dB.
   High-reliability, gold-metalization process.
   Best-in-class thermal resistance.
   Internally matched.
   High gain, efficiency, and linearity.
   Integrated ESD protection.
   Si LDMOS.
   Industry-standard packages.
   85 W minimum output power.