GENERAL DESCRIPTION
The Am29BDS640G is a 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 4,194,304 words of 16 bits each. This device uses a single VCC of 1.65 to 1.95 V to read, program, and erase the memory array. A 12.0-volt VID may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers.
At 54 MHz, the device provides a burst access of 13.5 ns at 30 pF with a latency of 87.5 ns at 30 pF. At 40 MHz, the device provides a burst access of 20 ns at 30 pF with a latency of 95 ns at 30 pF. The device operates within the industrial temperature range of -40°C to +85°C. The device is offered in a 93-ball FBGA package.
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from another bank, with zero latency. This releases the system from waiting for the completion of program or erase operations.