AO6601 Datasheet PDF - VER SEMICONDUCTOR CO.,LIMITED

General Description
   The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

FEATUREs
N-Ch:
● VDS (V)=30V
● ID= 3.4A (VGS=10V)
● RDS(ON) < 60mΩ (VGS = 10V)
● RDS(ON) < 70mΩ (VGS = 4.5V)
● RDS(ON) < 90mΩ (VGS = 2.5V)

P-Ch:
● VDS (V)=-30V
● ID=-2.3A (VGS=-10V)
● RDS(ON) < 115mΩ (VGS = -10V)
● RDS(ON) < 150mΩ (VGS = -4.5V)
● RDS(ON) < 200mΩ (VGS = -2.5V)