AQY410EH Datasheet PDF - Matsushita Electric Works

FEATURES
1. Low on resistance for normally closed type
This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS
2. Reinforced insulation 5,000 V type
More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation).
3. Compact 4-pin DIP size
The device comes in a compact  (W)6.4×(L)4.78×(H)3.2mm (W).252×(L).188×(H).126inch, 4-pin DIP size
4. Controls low-level analog signals
PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
5. High sensitivity, low ON resistance
Can control a maximum 0.13 A load current with a 5 mA input current. Low ON resistance of 18Ω (AQY410EH). Stable
operation because there are no metallic contact parts.
6. Low-level off state leakage current

TYPICAL APPLICATIONS
• Modem
• Telephone equipment
• Security equipment
• Sensors