AS6UA25616-BC Datasheet PDF - Alliance Semiconductor

Functional description
The AS6UA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.

‘Features
• AS6UA25616
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 262,144 words x 16 bits
• 2.7V to 3.6V at 55 ns
• 2.3V to 2.7V at 70 ns
• Low power consumption: ACTIVE
    - 114 mW at 3.6V and 55 ns
    - 68 mW at 2.7V and 70 ns
• Low power consumption: STANDBY
    - 72 µW max at 3.6V
    - 41 µW max at 2.7V
• 1.2V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
    - 48-ball FBGA
    - 400-mil 44-pin TSOP II
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA