Features
• Voltage Range: 1.65 V - 3.6 V
• 16 Mbit (2M x 8) Flash Memory
• Serial Peripheral Interface (SPI) compatible
- Supports SPI modes 0 and 3 (1-1-1)
- Supports dual output operation (1-1-2)
- Supports quad output operation (1-1-4)
- Supports quad I/O operation (1-4-4)
- Supports XiP operation (1-4-4, 0-4-4)
• 133 MHz maximum operating frequency
- Clock-to-output of 8 ns
• Flexible, optimized erase architecture for code + data storage applications
- Uniform 4-kByte block erase
- Uniform 32-kByte block erase
- Uniform 64-kByte block erase
- Full chip erase
• Flexible non-volatile block protection
• 1 x 128-byte factory-programmed unique identifier
• 3 x 128-byte, One Time Programmable (OTP) security registers
• Flexible programming
- Byte/Page program (1 to 256 Bytes)
- Sequential program mode capability
• Erase program suspend resume
• Software controlled Reset and Terminate commands
• Hardware reset option (via HOLD pin)
• JEDEC hardware reset
• Non-volatile status register configuration option
• JEDEC standard manufacturer and device ID read methodology
• Serial Flash Discoverable Parameters (SFDP) version 1.6
• Low power dissipation:
- 30 µA standby current (typical)
- 8.2 µA Deep Power-Down (DPD) current (typical)
- 5 - 7 nA Ultra Deep Power Down (UDPD) current (typical)
- 8.6 mA active read current (1-1-1 — 108 MHz)
- 9.2 mA program current
- 10.2 mA erase current
• User configurable and auto I/O pin drive levels
• Endurance
- 100,000 program/erase cycles
• Data Retention
- 20 years
• Temperature Range
- -40 °C to +85 °C
• Industry standard green (Pb/Halide-free/RoHS Compliant) Package Options
- 8-lead SOIC (150-mil) including silver free
- 8-lead SOIC (208-mil)
- 8-pad Ultra-thin DFN (2 x 3 x 0.6 mm)
- 8-ball WLCSP (3 x 2 x 3 ball matrix)
- Die in Wafer Form (DWF)