Description
The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 275 mW. When the device is deselected, the CMOS standby current is less than 10 mA.
FEATUREs
• Fast Read Access Time – 120 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-byte Page Write Operation
• Low Power Dissipation
– 50 mA Active Current
– 10 mA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 5.104 Read/Modify Write Cycles @ Ground Level
– Data Retention: 10 Years
• Operating Range: 4.5V to 5.5V, -55 to +125°C
• CMOS and TTL Compatible Inputs and Outputs
• No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of (according to MIL STD 883 Method 1019):
– 10 kRads (Si) Read-only Mode when Biased
– 30 kRads (Si) Read-only Mode when Unbiased
• JEDEC Approved byte-Wide Pinout
435 Mils Wide 32-Pin Flat Pack Package