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B20NM60(2005) Datasheet PDF - STMicroelectronics

STB20NM60 image

Part Name
B20NM60

Other PDF
  no available.

PDF
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page
15 Pages

File Size
355.3 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

General Features
■ TYPICAL RDS(on) = 0.25 Ω
â–  HIGH dv/dt AND AVALANCHE CAPABILITIES
â–  100% AVALANCHE TESTED
â–  LOW INPUT CAPACITANCE AND GATE
   CHARGE
â–  LOW GATE INPUT RESISTANCE


APPLICATIONS
   The MDmeshâ„¢ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.


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