B60N03L Datasheet PDF - STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.0085 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175 oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1")
■ SURFACE-MOUNTING D2PACK (TO-263)
   POWER PACKAGE IN TUBE (NO SUFFIX)
  OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)