BFG424F Datasheet PDF - NXP Semiconductors.

General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.

FEATUREs and benefits
■ Very high power gain
■ Low noise figure
■ High transition frequency
■ Emitter is thermal lead
■ Low feedback capacitance

APPLICATIONs
■ Radio Frequency (RF) front end wideband applications such as:
   ◆ analog and digital cellular telephones
   ◆ cordless telephones (Cordless Telephone (CT), Personal Handy-phone
      System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
   ◆ radar detectors
   ◆ pagers
   ◆ Satellite Antenna TeleVison (SATV) tuners
   ◆ high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
      Block (LNB)