BFP620F(2013) Datasheet PDF - Infineon Technologies

Low Noise SiGe:C Bipolar RF Transistor

• High gain low noise RF transistor
• Based on Infineons reliable high volume
   Silicon Germanium technology
• Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
   Outstanding noise figure NFmin = 1.3 dB at 6 GHz
• Maximum stable gain
   Gms = 21 dB at 1.8 GHz
   Gma = 10 dB at 6 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
   flat package (1.4 x 0.8 x 0.59 mm) with visible leads
• Qualification report according to AEC-Q101 available