BFP640F(2007) Datasheet PDF - Infineon Technologies

NPN Silicon Germanium RF Transistor*

• High gain low noise RF transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
   Outstanding noise figure F = 1.2 dB at 6 GHz
• High maximum stable gain
   Gms = 23 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description