BFP720F(2009) Datasheet PDF - Infineon Technologies

Product Brief
The BFP720F is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter TSFP-4 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720F is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.

FEATUREs
Main features:
• High performance general purpose wideband LNA transistor
• 150 GHz fT-Silicon Germanium Carbon technology
• Enables Best-In-Class performance for wireless applications due to
   high dynamic range
• Transistor geometry optimized for low-current applications
• Operation voltage: 1.0 V to 4.0 V
• Very high gain at high frequencies and low current consumption
• 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
• Ultra low noise figure from latest SiGe:C technology
• 0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz
• High linearity OP1dB = +7 dBm and OIP3 = +21 dBm at 5.5 GHz and low current consumption of 13 mA
• Pb-free (RoHS compliant) package

APPLICATIONs
   FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB.