BFU660F Datasheet PDF - NXP Semiconductors.

General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

FEATUREs and benefits
■ Low noise high linearity RF transistor
■ High output third-order intercept point 27 dBm at 1.8 GHz
■ 40 GHz fT silicon technology

APPLICATIONs
■ Analog/digital cordless applications
■ X-band high output buffer amplifier
■ ZigBee
■ SDARS second stage LNA
■ LTE, cellular, UMTS