BFU725F(2011) Datasheet PDF - NXP Semiconductors.

General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

FEATUREs and benefits
■ Low noise high gain microwave transistor
■ Noise figure (NF) = 0.7 dB at 5.8 GHz
■ High maximum stable gain 27 dB at 1.8 GHz
■ 110 GHz fT silicon germanium technology

APPLICATIONs
■ 2nd LNA stage and mixer stage in DBS LNB’s
■ Satellite radio
■ Low noise amplifiers for microwave communications systems
■ WLAN and CDMA applications
■ Analog/digital cordless applications
■ Ka band oscillators (DRO’s)