BFU768F Datasheet PDF - NXP Semiconductors.

General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

FEATUREs and benefits
■ Low noise high linearity RF transistor
■ 110 GHz fT silicon germanium technology
■ Optimal linearity for low current and high gain
■ Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
■ Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band
   and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
   ◆ Low current: 10.8 mA
   ◆ Noise figure < 1.2 dB
   ◆ Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
   ◆ High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
   ◆ Very fast on/off times
   ◆ Unconditionally stable
■ Higher IP3, higher gain or lower noise figure possible with different application circuits

APPLICATIONs
■ High linearity applications
■ Medium output power applications
■ Wi-Fi / WLAN / WiMAX
■ ZigBee