BLF369 Datasheet PDF - NXP Semiconductors.

General description
A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.

FEATUREs
■ Typical pulsed performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A:
    ◆ Load power PL = 500 W
    ◆ Power gain Gp = 19 dB
    ◆ Drain efficiency ηD = 55 %
■ Advanced flange material for optimum thermal behavior and reliability
■ Excellent ruggedness
■ High power gain
■ Designed for broadband operation (HF/VHF band)
■ Source on underside eliminates DC isolators, reducing common-mode inductance
■ Easy power control
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS), using exemption No. 7 of the annex

APPLICATIONs
■ Pulsed applications up to 500 MHz
■ Communication transmitter applications in the HF/VHF/UHF band under specific conditions
■ Industrial applications up to 500 MHz under special conditions