BLF369(2006) Datasheet PDF - NXP Semiconductors.

General description
A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band.

FEATUREs
■ Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A:
    ◆ Load power PL = 500 W
    ◆ Power gain Gp ≥ 18 dB
    ◆ Drain efficiency ηD = 60 %
■ Advanced flange material for optimum thermal behavior and reliability
■ Excellent ruggedness
■ High power gain
■ Designed for broadband operation (HF/VHF band)
■ Source on underside eliminates DC isolators, reducing common-mode inductance
■ Easy power control
■ Integrated ESD protection

APPLICATIONs
■ Communication transmitter applications in the UHF band
■ Industrial applications in the UHF band