BLP05M7200(2012) Datasheet PDF - NXP Semiconductors.

General description
200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz.

FEATUREs and benefits
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for ISM operation (425 MHz to 450 MHz)
■ Input integration for simple board design
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ RF power amplifiers for CW applications in the 425 MHz to 450 MHz frequency range
   such as ISM and RF plasma lighting.