BLV101A Datasheet PDF - New Jersey Semiconductor

DESCRIPTION
NPN silicon planar epitaxial transistors intended for common emitter, class-AB operation in base station transmitters in the frequency range 850 to 960 MHz, Both transistors have a SOT273 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange.

FEATURES
• High input and output impedances promote easy matching
• Implanted ballast resistors for optimum temperature profile
• Gold metallization ensures excellent reliability.