BSS83 Datasheet PDF - New Jersey Semiconductor

DESCRIPTION
Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate.

APPLICATIONS
• analog and/or digital switch
• switch driver