BV32G Datasheet PDF - STMicroelectronics

Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STBV32G and STBV32G-AP are supplied using halogen-free molding compound.

FEATUREs
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed

APPLICATIONs
■ Compact fluorescent lamps (CFLS)
■ SMPS for battery charger