CHA2066RBF Datasheet PDF - United Monolithic Semiconductors

Description
The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier.
The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in a new SMD leadless chip carrier.

Main Features
■ Broad band performance: 10-16GHz
■ Gain = 15dB (typical)
■ Noise Figure 2.0dB (typical)
■ Output power (P-1dB) 13dBm (typical)
■ Return loss < -6dB
■ SMD leadless package
■ Dimensions: 5.08 x 5.08 x 0.97 mm3