CHA2069RAF Datasheet PDF - United Monolithic Semiconductors

Description
The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier.
The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Main Features
■ Broad band performance: 18-31GHz
■ Gain = 21dB (typical)
■ Noise Figure 3.0 dB (typical for f<26GHz)
■ Return loss < -6dB
■ SMD leadless package
■ Dimensions: 5.08 x 5.08 x 0.97 mm3