CHA3092RBF Datasheet PDF - United Monolithic Semiconductors

Description
The monolithic microwave IC (MMIC) in the package is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Main Features
■ Broad band performance: 20-33GHz
■ Gain = 20dB (typical)
■ Output power (P-1dB): 19dBm (typical)
■ Return loss < -6dB
■ Low DC power consumption, 300mA
■ SMD leadless package
■ Dimensions: 5.08 x 5.08 x 0.97 mm3