Description
The CHA5052 is a three-stage monolithic high power amplifier.
The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process.
The circuit is manufactured with a power P-HEMT process, 0.15µm gate length, via holes through the substrate.
Main Features
■Broadband performance 7-16GHz
■High gain: 21dB
■ESD protections (see page 10)
■29dBm Output Power @ 1dB compression
■Typical 37dBm 3rd order intercept point
■DC power consumption, 700mA @ 5V