CHA5390TBF Datasheet PDF - United Monolithic Semiconductors

Description
The monolithic microwave IC (MMIC) in the package is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Main Features
■ Broadband performance: 24-30GHz
■ Small signal gain 21dB (typical)
■ Output power (P-1dB) 24dBm (typical)
■ Low DC power consumption: 460mA
■ SMD leadless package
■ Dimensions: 6.35 x 6.35 x 0.97 mm3