CMPA0060002F Datasheet PDF - Cree, Inc

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

   Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink.

FEATUREs
• 17 dB Small Signal Gain
• 3 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” total product size

APPLICATIONs
• Ultra Broadband Amplifiers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers